VAS10R0850DP
ID (A) |
15 |
VDS(V) |
100 |
MOS Type |
N |
ChipLead P/N |
VAS10R0850DP |
Package Type |
 TO252 |
Configuration |
Single |
VGS(V) |
±20 |
Vth(V) |
2/3/4 |
RDS(ON) (mΩ) max. at VGS= |
|||
10V |
4.5V |
2.5V |
1.8V |
65/85 |
- |
- |
- |
Ciss(pF) |
615 |
Coss(pF) |
47 |
Crss (pF) |
29 |
Qg (nC) 10V |
10.5 |
Qg (nC) 4.5V |
- |
Qgs(nC) |
4.8 |
Qgd(nC) |
2.9 |
Rg Ω |
2.1 |
EAS(mJ) |
18 |
PD(W) Tc=25℃ |
40 |
