VAS10R1150DP
ID (A) |
12 |
VDS(V) |
100 |
MOS Type |
N |
ChipLead P/N |
VAS10R1150DP |
Package Type |
 TO252 |
Configuration |
Single |
VGS(V) |
±20 |
Vth(V) |
1.2/1.6/2.5 |
RDS(ON) (mΩ) max. at VGS= |
|||
10V |
4.5V |
2.5V |
1.8V |
90/115 |
95/120 |
- |
- |
Ciss(pF) |
1400 |
Coss(pF) |
60 |
Crss (pF) |
35 |
Qg (nC) 10V |
20 |
Qg (nC) 4.5V |
- |
Qgs(nC) |
3.2 |
Qgd(nC) |
3.6 |
Rg Ω |
2 |
EAS(mJ) |
6 |
PD(W) Tc=25℃ |
34.7 |
