VAS08R1000DF
ID (A) |
11.8 |
VDS(V) |
80 |
MOS Type |
N |
ChipLead P/N |
VAS08R1000DF |
Package Type |
 TO252 |
Configuration |
Single |
VGS(V) |
±20 |
Vth(V) |
2.5 |
RDS(ON) (mΩ) max. at VGS= |
|||
10V |
4.5V |
2.5V |
1.8V |
100 |
115 |
- |
- |
Ciss(pF) |
1080 |
Coss(pF) |
60 |
Crss (pF) |
43 |
Qg (nC) 10V |
18 |
Qg (nC) 4.5V |
- |
Qgs(nC) |
3.8 |
Qgd(nC) |
3.3 |
Rg Ω |
- |
EAS(mJ) |
- |
PD(W) Tc=25℃ |
31.3 |
